Voltage and light bias dependent quantum efficiency measurements of GaInP/GaInAs/Ge triple junction devices
Identifieur interne : 000233 ( Main/Repository ); précédent : 000232; suivant : 000234Voltage and light bias dependent quantum efficiency measurements of GaInP/GaInAs/Ge triple junction devices
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Abstract
III-V monolithic multi-junction solar cells reach efficiencies exceeding 40% and have applications in space and terrestrial concentrator systems. Due to the series connection of the junctions, the external quantum efficiency (EQE) measurement of multi-junction cells presents additional challenges compared to EQE measurement procedures for single-junction devices. Previous work has shown that optimization of bias light and voltage is necessary to minimize measurement artifacts that usually appear during the measurement of the Germanium (Ge) junctions with low shunt resistance. This paper aims to contribute to the improvement of multi-junction device characterization by reporting the effects of low and high shunt resistance junctions on EQE for various voltage and light bias conditions. Voltage and light bias are shown to have different effects on junctions with different shunt resistance. Therefore further investigation of junctions with different shunt resistance under variable light and voltage conditions is needed to provide better understanding of the precise test conditions for EQE measurements. Our results showed that in the high shunt resistance junctions the bias voltage technique is not necessary. However, in the case of junctions with low shunt resistance, a combination of voltage and light bias is required during EQE measurements. Furthermore, the luminescence coupling effect was observed during EQE measurements at very intense light bias conditions confirming previous indications. Finally, an alternative approach for measuring the EQE is proposed.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Voltage and light bias dependent quantum efficiency measurements of GaInP/GaInAs/Ge triple junction devices</title><author><name sortKey="Paraskeva, Vasiliki" uniqKey="Paraskeva V">Vasiliki Paraskeva</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Photovoltaic Technology, ECE, University of Cyprus, 75 Kallipoleos Street</s1><s2>Nicosia 1678</s2><s3>CYP</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country>Chypre (pays)</country><wicri:noRegion>Nicosia 1678</wicri:noRegion></affiliation></author><author><name sortKey="Hadjipanayi, Maria" uniqKey="Hadjipanayi M">Maria Hadjipanayi</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Photovoltaic Technology, ECE, University of Cyprus, 75 Kallipoleos Street</s1><s2>Nicosia 1678</s2><s3>CYP</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country>Chypre (pays)</country><wicri:noRegion>Nicosia 1678</wicri:noRegion></affiliation></author><author><name sortKey="Norton, Matthew" uniqKey="Norton M">Matthew Norton</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>European Commission, DG JRC, Institute for Energy and Transport, Renewable Energy Unit, TP450</s1><s2>21027 Ispra (VA)</s2><s3>ITA</s3><sZ>3 aut.</sZ></inist:fA14><country>Italie</country><wicri:noRegion>21027 Ispra (VA)</wicri:noRegion></affiliation></author><author><name sortKey="Pravettoni, Mauro" uniqKey="Pravettoni M">Mauro Pravettoni</name><affiliation wicri:level="1"><inist:fA14 i1="03"><s1>Institute of Applied Sustainability to the Build Environment, University of Applied Sciences and Arts of Southern Switzerland</s1><s2>Canobbio 6952</s2><s3>CHE</s3><sZ>4 aut.</sZ></inist:fA14><country>Suisse</country><wicri:noRegion>Canobbio 6952</wicri:noRegion></affiliation></author><author><name sortKey="Georghiou, George E" uniqKey="Georghiou G">George E. Georghiou</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Photovoltaic Technology, ECE, University of Cyprus, 75 Kallipoleos Street</s1><s2>Nicosia 1678</s2><s3>CYP</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country>Chypre (pays)</country><wicri:noRegion>Nicosia 1678</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="inist">13-0239241</idno><date when="2013">2013</date><idno type="stanalyst">PASCAL 13-0239241 INIST</idno><idno type="RBID">Pascal:13-0239241</idno><idno type="wicri:Area/Main/Corpus">000A63</idno><idno type="wicri:Area/Main/Repository">000233</idno></publicationStmt><seriesStmt><idno type="ISSN">0927-0248</idno><title level="j" type="abbreviated">Sol. energy mater. sol. cells</title><title level="j" type="main">Solar energy materials and solar cells</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Bias voltage</term><term>Comparative study</term><term>Gallium phosphide</term><term>Germanium</term><term>III-V compound</term><term>Indium phosphide</term><term>Luminescence</term><term>Measurement method</term><term>Multijunction solar cells</term><term>Optimization</term><term>Performance evaluation</term><term>Quantum yield</term><term>Series connection</term><term>Shunt</term><term>Ternary compound</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Rendement quantique</term><term>Cellule solaire multijonction</term><term>Evaluation performance</term><term>Montage série</term><term>Etude comparative</term><term>Méthode mesure</term><term>Optimisation</term><term>Tension polarisation</term><term>Shunt</term><term>Luminescence</term><term>Composé ternaire</term><term>Phosphure de gallium</term><term>Phosphure d'indium</term><term>Germanium</term><term>Composé III-V</term><term>GaInP</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">III-V monolithic multi-junction solar cells reach efficiencies exceeding 40% and have applications in space and terrestrial concentrator systems. Due to the series connection of the junctions, the external quantum efficiency (EQE) measurement of multi-junction cells presents additional challenges compared to EQE measurement procedures for single-junction devices. Previous work has shown that optimization of bias light and voltage is necessary to minimize measurement artifacts that usually appear during the measurement of the Germanium (Ge) junctions with low shunt resistance. This paper aims to contribute to the improvement of multi-junction device characterization by reporting the effects of low and high shunt resistance junctions on EQE for various voltage and light bias conditions. Voltage and light bias are shown to have different effects on junctions with different shunt resistance. Therefore further investigation of junctions with different shunt resistance under variable light and voltage conditions is needed to provide better understanding of the precise test conditions for EQE measurements. Our results showed that in the high shunt resistance junctions the bias voltage technique is not necessary. However, in the case of junctions with low shunt resistance, a combination of voltage and light bias is required during EQE measurements. Furthermore, the luminescence coupling effect was observed during EQE measurements at very intense light bias conditions confirming previous indications. Finally, an alternative approach for measuring the EQE is proposed.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0927-0248</s0></fA01><fA03 i2="1"><s0>Sol. energy mater. sol. cells</s0></fA03><fA05><s2>116</s2></fA05><fA08 i1="01" i2="1" l="ENG"><s1>Voltage and light bias dependent quantum efficiency measurements of GaInP/GaInAs/Ge triple junction devices</s1></fA08><fA11 i1="01" i2="1"><s1>PARASKEVA (Vasiliki)</s1></fA11><fA11 i1="02" i2="1"><s1>HADJIPANAYI (Maria)</s1></fA11><fA11 i1="03" i2="1"><s1>NORTON (Matthew)</s1></fA11><fA11 i1="04" i2="1"><s1>PRAVETTONI (Mauro)</s1></fA11><fA11 i1="05" i2="1"><s1>GEORGHIOU (George E.)</s1></fA11><fA14 i1="01"><s1>Photovoltaic Technology, ECE, University of Cyprus, 75 Kallipoleos Street</s1><s2>Nicosia 1678</s2><s3>CYP</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>5 aut.</sZ></fA14><fA14 i1="02"><s1>European Commission, DG JRC, Institute for Energy and Transport, Renewable Energy Unit, TP450</s1><s2>21027 Ispra (VA)</s2><s3>ITA</s3><sZ>3 aut.</sZ></fA14><fA14 i1="03"><s1>Institute of Applied Sustainability to the Build Environment, University of Applied Sciences and Arts of Southern Switzerland</s1><s2>Canobbio 6952</s2><s3>CHE</s3><sZ>4 aut.</sZ></fA14><fA20><s1>55-60</s1></fA20><fA21><s1>2013</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>18016</s2><s5>354000503882310080</s5></fA43><fA44><s0>0000</s0><s1>© 2013 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>14 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>13-0239241</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Solar energy materials and solar cells</s0></fA64><fA66 i1="01"><s0>NLD</s0></fA66><fC01 i1="01" l="ENG"><s0>III-V monolithic multi-junction solar cells reach efficiencies exceeding 40% and have applications in space and terrestrial concentrator systems. Due to the series connection of the junctions, the external quantum efficiency (EQE) measurement of multi-junction cells presents additional challenges compared to EQE measurement procedures for single-junction devices. Previous work has shown that optimization of bias light and voltage is necessary to minimize measurement artifacts that usually appear during the measurement of the Germanium (Ge) junctions with low shunt resistance. This paper aims to contribute to the improvement of multi-junction device characterization by reporting the effects of low and high shunt resistance junctions on EQE for various voltage and light bias conditions. Voltage and light bias are shown to have different effects on junctions with different shunt resistance. Therefore further investigation of junctions with different shunt resistance under variable light and voltage conditions is needed to provide better understanding of the precise test conditions for EQE measurements. Our results showed that in the high shunt resistance junctions the bias voltage technique is not necessary. However, in the case of junctions with low shunt resistance, a combination of voltage and light bias is required during EQE measurements. Furthermore, the luminescence coupling effect was observed during EQE measurements at very intense light bias conditions confirming previous indications. 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